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A Critical Dimension Scanning Electron Microscope (CD-SEM) is a specialized SEM used to measure the dimensions of tiny features on semiconductor wafers, photomasks, and other materials. These measurements are crucial for ensuring the accuracy and precision of manufactured electronic devices. ◉ Compatible With 6/8 Inch Wafers Size, Magnification 1000x-300000x ◉ Resolution 2.5nm (Acc=800V), Accelerating Voltages 500V--1600V ◉ Repeatability Static & Dynamic ±1% or 3nm(3 Sigma), Probe Beam Current 3~30pA ◉ High-Speed Wafer Transfer System Design Suitable For 3rd-Generation Semiconductor Chips ◉ Advanced Electron Optics Systems And Image Processing, Including Chiller, Dry pump |
▶Key Features CD-SEMs use a low-energy electron beam and have enhanced magnification calibration to ensure accurate and repeatable measurements. They are designed to measure features like the width, height, and sidewall angles of patterns. |
▶Purpose CD-SEMs are essential for metrology in the semiconductor industry, helping to measure the critical dimensions (CDs) of patterns created during lithography and etching processes. CDs refer to the smallest feature sizes that can be reliably produced and measured on a wafer. |
▶Applications These instruments are used in the manufacturing lines of electronic devices to ensure the dimensional accuracy of the various layers and features that make up a chip. They also play a crucial role in process development and control, helping to identify and correct any issues that may arise during the manufacturing process. ▶Importance Without CD-SEMs, modern microelectronics would struggle to achieve the high level of precision and performance that is demanded by the industry. They are indispensable for ensuring the reliability and functionality of modern electronic devices. |
▶Shifting Technology As lithography techniques advance and feature sizes continue to shrink, CD-SEMs are constantly evolving to meet the demands of the industry. New technologies and advancements in CD-SEM are being developed to address the challenges of measuring increasingly complex patterns |
| A63.7190 Critical Dimension Scanning Electron Microscope (CDSEM) | ||
| Wafer Size | A63.7190-68: 6/8 Inches | A63.7190-12: 12 Inches |
| Resolution | 2.5nm (Acc=800V) | 1.8nm (Acc-800V) |
| Accelerating Voltages | 0.5-1.6KV | 0.3-2.0KV |
| Repeatability | Static & Dynamic ±1% or 3nm(3 Sigma) | Static & Dynamic ±1% or 0.3nm(3 Sigma) |
| Probe Beam Current | 3~30pA | 3~40pA |
| Measuring Range | FOV 0.1~2.0μm | FOV 0.05~2.0μm |
| Throughput | >20 Wafers/Hour, | >36 Wafers/Hour, |
| 1 Point/Chip, | 1 Point/Chip, | |
| 20 Chips/Wafer | 20 Chips/Wafer | |
| Magnification | 1Kx~300Kx | 1Kx-500Kx |
| Stage Accuracy | 0.5μm | |
| Electron Source | Schottky Thermal Field Emitter | |
| Comparation of Main CDSEM Models on Market | |||||
| Specification | Hitachi | Hitachi | Hitachi | Opto-Edu | Opto-Edu |
| S8840 | S9380 | S9380 II | A63.7190-68 | A63.7190-12 | |
| 1. Wafer Size | 6inch/8inch | 8inch/12inch | 8inch/12inch | 6inch/8inch | 12inch |
| 2. Resolution | 5nm (Acc=800V) | 2nm (Acc=800V) | 2nm (Acc=800V) | 2.5nm (Acc=800V) | 1.8nm (Acc=800V) |
| 3. Accelerating Voltage | 500-1300V | 300-1600V | 300-1600V | 500-1600V | 300-2000V |
| 4. Repeatability (static and dynamic) | ±1% or 5nm(3 sigma) | ±1% or 2nm(3 sigma) | ±1% or 2nm(3 sigma) | ±1% or 3nm(3 sigma) | ±1% or 0.3nm(3 sigma) |
| 5. Ip Range (Probe current) | 1-16pA | 3-50pA | 3-50pA | 3-30pA | 3-40pA |
| 6. FOV Size | - | 50nm-2um | 0.05-2um | 0.1-2um | 0.05-2um |
| 7.Througput | 26 wafers/hour, | 24 wafers/hour, | 24 wafers/hour, | >20wafers/hour, | 36 wafers/hour, |
| 1point/chip, | 1point/chip, | 1point/chip, | 1point/chip, | 1point/chip, | |
| 5chips/wafer | 20chips/wafer | 20chips/wafer | 20chips/wafer | 20chips/wafer | |
Huang Xin