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Introduction of Electron Beam Lithography Machine
Sepcification of Chinese EBL Lithography Machine
| Stage Specifications | |
| Standard Equipment | Laser Interferometer Stage |
| Stage Travel | ≤105 mm |
| Electron Gun and Imaging Specitications | |
| Schottky Field Emission Gun | Acceleration Voltage 2OV~ 30kVSide Secondary ElectronDetector and In-Lens Electron Detector |
| Image Resolution | ≤1nm@15kV;≤1.5nm@1kV |
| Beam Current Densit | >5300 A/cm2 |
| Minimum Beam Spot Size | ≤2 nm |
| Lithography Specitications | |
| Electron Beam Shutter | Rise Time < 100 ns |
| Writing Field | ≤500x500 um |
| Minimum Single Exposure Line Width | 10±2nm |
| Scan Speed | 25 MHz/ 50 MHz |
| Graphics Generator Parameters | |
| Control Core | High-performance FPGA |
| Maximum Scan speed | 50 MHz |
| D/A Resolution | 20-bit |
| Supported Writing Field Sizes | 10 um~500 um |
| Beam Shutter Suppor | 5VTTL |
| Minimum Dwell Time Increment | 10ns |
| Supported File Formats | GDSIl, DXF, BMP, etc. |
| Faraday Cup Beam Current Measurement | Included |
| Proximity Effect Correction | Optional |
| Laser Interferometer Stage | Optional |
| Scan Modes | Sequential (Z-type), Serpentine (S-type), Spiral, and other vector scan modes |
| Exposure Modes | Supports field calibration, field stitching, overlay, and multi-layer automatic exposure |
| External Channel Support | supports electron beam scanning, stage movement, beam shutter controL, andsecondary electron detection |
Features of Chinese Electron Beam Lithography Machine
 | Laser Interferometer Stage Laser Interferometer Stage: An advanced laser interferometer stage that meets the requirements for large-stroke, high-precision stitching and overlay |
Field Emission Gun A high-resolution field emission gun is an important guarantee for lithography quality |  |
 | Graphics Generator Achieves ultra-high resolution pattern drawing while ensuring ultra-high-speed scanning |
| A63.7010 VS Raith 150 Two | ||
| Device Model | OPTO-EDU A63.7010 (China) | Raith 150 Two (Germany) |
| Acceleration Voltage (kV) | 30 | 30 |
| Min. Beam SpotDiameter (nm) | 2 | 1.6 |
| Stage Size (inch) | 4 | 4 |
| Minimum Linewidth (nm) | 10 | 8 |
| Stitching Accuracy (nm) | 50(35nm) | 35 |
| Overlay Accuracy (nm) | 50(35nm) | 35 |
Huang Xin